document number: 83612 www.vishay.com revision 17-august-01 2?5 features current transfer ratio at i f =10 ma il1, 20% min. IL2, 100% min. il5, 50% min. high collector-emitter voltage il1 ?bv ceo =50 v IL2, il5 ?bv ceo =70 v field-effect stable by transparent ion shield (trios) double molded package offers isolation test voltage 5300 v rms underwriters lab file #e52744 vde app roval #0884 (available with option 1) description the il1/2/5 are optically coupled isolated pairs employing gaas infrared leds and silicon npn phototransistor. signal information, including a dc level, can be transmitted by the drive while main- taining a high degree of electrical isolation between input and output. the il1/2/5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. these couplers can be used also to replace relays and transformers in many digital interface applications such as crt modulation. see appnote 45, ?ow to use optocoupler normalized curves? v de maximum ratings emitter reverse voltage ................................................................................... 6.0 v forward current ................................................................................60 ma surge current.......................................................................................2.5 a power dissipation............................................................................ 100 mw derate linearly from 25 c........................................................ 1.33 mw/ c detector collector-emitter reverse voltage il1 ....................................................................................................... 50 v IL2, il5 ................................................................................................ 70 v emitter-base reverse voltage.............................................................. 7.0 v collector-base reverse voltage............................................................ 70 v collector current ...............................................................................50 ma collector current (t<1.0 ms) ............................................................400 ma power dissipation............................................................................ 200 mw derate linearly from 25 c .......................................................... 2.6 mw/ c package package power dissipation ........................................................... 250 mw derate linearly from 25 c .......................................................... 3.3 mw/ c isolation test voltage (between emitter and detector referred to standard climate 23 c/50%rh, din 50014) .......... 5300 v rms creepage ...................................................................................... 7.0 mm clearance...................................................................................... 7.0 mm comparative tracking index per din iec 112/vde 0303, part 1 ........................................................... 175 isolation resistance v io =500 v, t a =25 c ................................................................... 10 12 ? v io =500 v, t a =100 c ................................................................. 10 11 ? storage temperature ........................................................ ?0 c to +150 c operating temperature .................................................... ?0 c to +100 c junction temperature......................................................................... 100 c soldering temperature (2.0 mm from case bottom) .......................... 260 c .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3 ? .300?347 (7.62?.81) 4 typ. 1 2 3 6 5 4 base collector emitter anode cathode nc dimensions in inches (mm) il1/2/5 phototransistor optocoupler
document number: 83612 www.vishay.com revision 17-august-01 2?6 characteristics symbol min typ max unit condition emitter forward voltage v f 1.25 1.65 v i f =60 ma breakdown voltage v br 6.0 30 i r =10 a reverse current i r 0.01 10 a v r =6.0 v capacitance c o ?0 pf v r =0 v, f=1.0 mhz thermal resistance junction to lead r thjl 750 k/w detector capacitance c ce c cb c eb 6.8 8.5 11 ?f v ce =5.0 v, f=1.0 mhz v cb =5.0 v, f=1.0 mhz v eb =5.0 v, f=1.0 mhz collector-emitter leakage current i ceo 5.0 50 na v ce =10 v collector-emitter saturation voltage v cesat 0.25 v i ce =1.0 ma, i b =20 a base-emitter voltage v be 0.65 v v ce =10 v, i b =20 a dc forward current gain hfe 200 650 1800 v ce =10 v, i b =20 a saturated dc forward current gain hfe sat 120 400 600 v ce =0.4 v, i b =20 a thermal resistance junction to lead r thjl 500 k/w package transfer characteristics il1 saturated current transfer ratio (collector-emitter) ctr cesat ?5 % i f =10 ma, v ce =0.4 v current transfer ratio (collector-emitter) ctr ce 20 80 300 i f =10 ma, v ce =10 v current transfer ratio (collector-base) ctr cb 0.25 i f =10 ma, v cb =9.3 v IL2 saturated current transfer ratio (collector-emitter) ctr cesat 170 % i f =10 ma, v ce =0.4 v current transfer ratio (collector-emitter) ctr ce 100 200 500 i f =10 ma, v ce =10 v current transfer ratio ctr cb 0.25 i f =10 ma, v cb =9.3 v il5 saturated current transfer ratio (collector-emitter) ctr cesat 100 % i f =10 ma, v ce =0.4 v current transfer ratio (collector-emitter) ctr ce 50 130 400 i f =10 ma, v ce =10 v current transfer ratio ctr cb 0.25 i f =10 ma, v cb =9.3 v isolation and insulation common mode rejection output high cmh 5000 v/ sv cm =50 v p-p , r l =1 k ? , i f =10 ma common mode rejection output low cml common mode coupling capacitance c cm 0.01 pf package capacitance c i-o 0.6 v i-o =0 v, f=1.0 mhz insulation resistance r s ?0 14 ? v i-o =500 v
document number: 83612 www.vishay.com revision 17-august-01 2?7 switching times figure 1. non-saturated switching timing figure 2. saturated switching timing v o v cc =5 v r l =75 ? i f =10 ma f=10 khz df=50% v o v cc =5 v r l i f =10 ma f=10 khz df=50% figure 3. non-saturated switching timing figure 4. saturated switching timing v 0 i f t phl t s t r t f t d 50% t plh i f t r v o t d t s t f t phl t plh v th =1.5 v non-saturated switching time table?typical saturated switching time table?typical characteristic sym il1 i f =20 ma IL2 i f =5.0 ma il5 i f =10 ma unit test condition delay t d 0.8 1.7 1.7 s rise time t r 1.9 2.6 2.6 v cc =5.0 v storage t s 0.2 0.4 0.4 r l =75 ? fall time t f 1.4 2.2 2.2 propagation h-l t phl 0.7 1.2 1.1 t p measured at 50% of output propagation l-h t plh 1.4 2.3 2.5 characteristic sym il1 i f =20 ma IL2 i f =5.0 ma il5 i f =10 ma unit test condition delay t d 0.8 1.0 1.7 s rise time t r 1.2 2.0 7.0 v cl =5.0 v storage t s 7.4 5.4 4.6 v ce =0.4 fall time t f 7.6 13.5 20 r l =1.0 k propagation h-l t phl 1.6 5.4 2.6 v th =1.5 v propagation l-h t plh 8.6 7.4 7.2
document number: 83612 www.vishay.com revision 17-august-01 2 88 figure 5. forward voltage versus forward current figure 6. normalized non-saturated and saturated ctr at t a =25 c versus led current figure 7. normalized non-saturated and saturated ctr at t a =50 c versus led current figure 8. normalized non-saturated and saturated ctr at t a =70 c versus led current 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 i f - forward current - ma v f - forward voltage - v t a = -55 c t a = 100 c t a = 25 c 100 10 1 .1 0.0 0.5 1.0 1.5 nctr(sat) nctr i f - led current - ma nctr - normalized ctr normalized to: v ce = 10 v, i f = 10 ma t a = 25 c ctrce(sat) v ce = 0.4 v 100 10 1 .1 0.0 0.5 1.0 1.5 nctr(sat) nctr i f - led current - ma t a = 50 c nctr - normalized ctr normalized to: v ce =10 v, i f =10 ma, t a =25 c ctrce(sat) v ce = 0.4 v 100 10 1 .1 0.0 0.5 1.0 1.5 nctr(sat) nctr i f - led current - ma nctr - normalized ctr ctrce(sat) v ce = 0.4v normalized to: v ce =10 v, i f =10 ma t a =25 c t a =70 c figure 9. normalized non-saturated and saturated ctr at t a =100 c versus led current figure 10. collector-emitter current versus temperature and led current figure 11. collector-emitter leakage current versus temperature figure 12. normalized ctr cb versus led current and temperature 100 10 1 .1 0.0 0.5 1.0 1.5 if - led current - ma nctr - normalized ctr normalized to: v ce =10 v, i f =10 ma, t a =25 c ctrce(sat) v ce =0.4 v nctr(sat) nctr t a =100 c 60 50 4 0 3 0 2 0 10 0 0 5 10 15 20 25 30 35 50? 70? 100? if - led current - ma ice - collector current - ma 25 c -20 0 20 40 60 80 100 10 5 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 t a - ambient temperature - c i ceo - collector-emitter - na typical v ce = 10 v worst case .1 1 10 100 0.0 0.5 1.0 1.5 25? 50? 70? if - led current - ma nctrcb - normalized ctrcb normalized to: if =10 ma vcb = 9.3 v ta = 25?
document number: 83612 www.vishay.com revision 17-august-01 2 89 figure 13. collector base photocurrent versus led current figure 14. normalized photocurrent versus i f and temperature figure 15. normalized non-saturated hfe versus base current and temperature 100 10 1 .1 .01 .1 1 10 100 1000 if - led current - ma icb - collector base photocurrent - ? icb = 1.0357 *if ^1.3631 ta = 25? .1 1 10 100 .01 .1 1 10 nib-t a =-20 c nib,t a =50 c nib,t a =70 c i f -led current- ma normalized photocurrent normalized to: i f = 10 ma, t a = 25 c nib,t a =25 c 1 10 100 1000 0.4 0.6 0.8 1.0 1.2 ib - base current - ? nhfe - normalized hfe ib = 20? vce = 10 v ta = 25? -20 c 25 c 50 c 70 c normalized to: figure 16. normalized saturated hfe versus base current and temperature figure 17. propagation delay versus collector load resistor 1 10 100 1000 0.0 0.5 1.0 1.5 i b - base current - ( a) nhfe(sat) - normalized saturated hfe v ce = 0.4 v normalized to: v ce = 10 v i b = 20 a t a = 25 c 70 c 50 c 25 c -20 c 100 10 1 .1 1 10 100 1000 1.0 1.5 2.0 2.5 rl - collector load resistor - k ? tphl - propagation delay - ? tplh tphl ta = 25?, if = 10ma vcc = 5 v, vth = 1.5 v tp ?propagatio delay - ?
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